Nazwa modułu: Optoelectronics Rok akademicki: 2014/2015 Kod: IES-1-404-s Punkty ECTS: 4 Wydział: Informatyki, Elektroniki i Telekomunikacji Kierunek: Electronics and Telecommunications Specjalność: - Poziom studiów: Studia I stopnia Forma i tryb studiów: - Język wykładowy: Polski Profil kształcenia: Ogólnoakademicki (A) Semestr: 4 Strona www: Osoba odpowiedzialna: Stapiński Tomasz (stap@agh.edu.pl) Osoby prowadzące: dr inż. Marszałek Konstanty (marszale@agh.edu.pl) Stapiński Tomasz (stap@agh.edu.pl) Opis efektów kształcenia dla modułu zajęć Kod EKM Student, który zaliczył moduł zajęć wie/umie/potrafi Powiązania z EKK Sposób weryfikacji efektów kształcenia (forma zaliczeń) Wiedza M_W001 has an ordered and a theoretical knowledge of the fotonic, including the knowledge necessary for understanding the physical bases of telecommunication optical systems, optical recording and information processing; ET1A_W03 Egzamin M_W002 has the ordered knowledge of operation principles of optoelectronic components and simple optoelectronic systems; ET1A_W12 Egzamin Umiejętności M_U001 works individually and in a team; estimates the time needed for the implementation of the respective tasks; develops and realizes the work schedule to meet the deadlines; ET1A_U02 Sprawozdanie Kompetencje społeczne M_K001 is aware of the responsibility for their own work and willingness to comply with the principles of working in a team and bearing responsibility for cooperative tasks; ET1A_K04 Sprawozdanie 1 / 5
Matryca efektów kształcenia w odniesieniu do form zajęć Kod EKM Student, który zaliczył moduł zajęć wie/umie/potrafi Forma zajęć Wykład audytoryjne laboratoryjne projektowe Konwersatori um seminaryjne praktyczne terenowe warsztatowe Inne E-learning Wiedza M_W001 M_W002 Umiejętności M_U001 has an ordered and a theoretical knowledge of the fotonic, including the knowledge necessary for understanding the physical bases of telecommunication optical systems, optical recording and information processing; has the ordered knowledge of operation principles of optoelectronic components and simple optoelectronic systems; works individually and in a team; estimates the time needed for the implementation of the respective tasks; develops and realizes the work schedule to meet the deadlines; + - + - - - - - - - - + - + - - - - - - - - - - + - - - - - - - - Kompetencje społeczne M_K001 is aware of the responsibility for their own work and willingness to comply with the principles of working in a team and bearing responsibility for cooperative tasks; - - + - - - - - - - - Treść modułu zajęć (program wykładów i pozostałych zajęć) Wykład Lecture.(30 g.) 1.Materials for optoelectronics (4 g.) Materials for semiconductor light sources and photodetectors. Energetic model, band-gap role especially for group III-V compounds. Light-material interactions absorption, emission, photons, electrons, phonons. Conditions for radiative emission in semiconducor. Kinds of band-gaps. Efficiency of radiative recombination. General Einstein s considerations on emission and absorption in the matter. Spontaneous emission, stimulated emission. Anti-Boltzman distribution in the matter. Light Amplification by Stimulated Emission of Radiation. Emitted light power density role. Positive optical feed-back optical resonator, optical resonance, 2 / 5
Fabry-Perot resonator and its features 2.Semiconductor light sources (9 g.) LED basics. Phenomena, efficiency, chromatic features. Rate equatins for LED. Heterojunction in semiconductor light sources. Technical characteristics of LED emission characteristics, modulation possibilities, frequency characteristics. White LED. Semiconductor laser. Rate equations for semiconductor laser. Biheterojunction, strip semiconductor laser structure, electrical and optical features. Lasing effect conditions. Emission characteristics. Threshold current. Thermal dependences. Spectral features. Multimode light emission. Monomode light emission. Laser spectra. Vertical Cavity Semiconductor Laser VCSEL structure and features. Basic aplication induced problems. Output light coupling, operating point stabilization. Simple controlling and driving circuits. Light generated noises in lasers. Degradation processes in LEDs and semiconductor lasers. Solid state laser overview. Ruby laser, Nd:YAG i Nd:YVO4. Diode Pumped Soilid State Laser DPSSL with light frequency doubling. 3.Photodetectors and photovoltaic cells (4 g.). p-n junction photodetector. Light absorption, charge carrier separation, photocurrent. p-i-n structure photodetector. Quantum efficiency and sensitivity. U/I characteristics. Chromatic dependence of sensitivity. Dynamical and frequency features of p-i-n photodiode. Front-end circuits. Heterojunction in photodiode. Avalanche photodiode APD. Phenomena, structure, characteristics. Noises in p-i-n and APD photodiodes. Photovoltaic cell. Structure of monolitic photovoltaic cell. Photovoltaic phenomenon. Optoelectronic characteristics. Solar cell. Materials, structures, chromatic efficiency of absorption problem, U/I characteristics. Energetic efficiency. Controlling circuits. 4.Basics in optical fibers (5g.). Toatal internal reflection as the mechanizm of the fiber optic light transfer. Numerical Aperture of the fiber. Light propagation equations and their solutions light modes. NA, construction, optical parameters of the fiber and normalized frequency In the fiber. Multimode propagation, graded index solution, mode dispersion. Monomode propagation structures, conditions features. Light damping mechanisms absorption and scattering Rayleigh effect. Chromatic disperssion In the fiber. Transmission bandwidth limitations. Comparison of fibers. Non telecomminication applications of optical fi bers fiber optics, construction of coherent fiber bundless. 5.Displays and image sensors (4 g.). Cathode-ray tube some history. Current solutions LED display. Liquid Crystal Displays phenomena, liquid crystal materials. Dynamic dispersion. Twisted nematic. Colour LCD. Semiconductor image sensors. Charge Coupled Device cell, basic structure, control and output signals. Image analyzing structures CCD line and matrix. Control and output signals organization. CMOS image sensor comparison with CCD. 6.Components based on photoemission (2 g.). Electron photoemission. Materials for photocathodes and their features. Vacuum Photo Multiplier construction, characteristics. Image amplifiers and converters. Noctovision. Semiconductor Photo Multiplier structure, features, characteristics and applications. 7.Applied system (2 g.) Standard CD. Specyfika i zasada budowy płyty CD. Rola kodowania sygnału na płycie CIRC. System odczytu płyty, laserowa głowica odczytująca. Metody ogniskowania, śledzenia ścieżki i odczytu danych. Korekcja błędów odczytu. Zapis na płytach. Specyfika płyt DVD, Blue-Ray. laboratoryjne Laboratory. (15 g.) 1.LED.(4 g.) Microscopic observation of different LEDs structures. Typical signalizinf LED as well as Burrus structure. Measurements nad discussions on I/U characteristics. Emission 3 / 5
characteristics. White LED structure. Basic application. Colour RGB pixel structure, driving possibilities. LEDs displays, numerical seven segment display, matrix display, driving circuits. Transoptors basic structure. Overview of different type transoptors and their features. Measurements of the step response. 2.Semiconductor laser.(4 g.) Mocroscopic observation of semiconductor laser structure. The role of the pedestal and monitoring photodiode. Light emission. How to distinguish the lasing action? Specles. Measurement of emission characteristics of typical Fabry-Perot laser and its thermat behaviour. Definition of the threshold current. Optical spectra measurements. Multimode spectrum, monomode spectrum. Modal noise. Measurements of VCSEL emission characteristics and emitted light spectrum. 3.Photodetector and solar cell.(3 g.) p-i-n, photodetector measurements of U/I characteristics, dynamic resistance calculations. Photovoltaic cell measurements- U/I characteristics. Solar cells measurements for policrystalic type and thin layer cells. Measurements of U/I characteristics, calculations of Fill Factors and energetic efficiency. Calculations for different loads. 4.Optical fiber.(4 g.) Observations of total internal reflection phenomenon in the transparent plastic rods of different shapes. Light leaking conditions. Maximum acceptance angle. Plastic optical fiber. Demonstration and calculation of the Numerical Aperture. Observation of different mode group transfer basic modes group and higher modes group in the fiber as the function of the acceptance angle. Plastic Cladded Silica PCS fiber. Telecommunication, multimode full-silica glass fiber. Microscopic observation of the fiber cross-section. Measurements of the attenuation in the multimode fiber as the function of the propagating wavelength. Sposób obliczania oceny końcowej Zgodnie z regulaminem studiów AGH. Wymagania wstępne i dodatkowe 1.Differentials and integrals. 2.Basic of the solid state physics. 3.Basic ray, wave and electromagnetic optics.. 4.Basic circuit theory. 5.Basic signals theory. Zalecana literatura i pomoce naukowe 1. B.E.A. Saleh, M.C.Teich Fundamentals of Photonics Wiley 2007. 2. G.Einarsson Principles of Lightwave Communication JohnWiley and Sons 1996. Publikacje naukowe osób prowadzących zajęcia związane z tematyką modułu Nie podano dodatkowych publikacji Informacje dodatkowe Brak 4 / 5
Nakład pracy studenta (bilans punktów ECTS) Forma aktywności studenta Udział w wykładach Udział w ćwiczeniach laboratoryjnych Samodzielne studiowanie tematyki zajęć Przygotowanie sprawozdania, pracy pisemnej, prezentacji, itp. Przygotowanie do zajęć Sumaryczne obciążenie pracą studenta Punkty ECTS za moduł Obciążenie studenta 28 godz 14 godz 38 godz 10 godz 10 godz 100 godz 4 ECTS 5 / 5