1. "Interaction of high-energy phonons with conduction electrons in semiconductors", W. Zawadzki, P. Boguslawski, Phys. Rev. Lett. 31, 1403 (1973).

Transkrypt

1 Publications Review articles and book chapters: 1. "Point defects and impurities in SiC and group-iii nitrides", rozdział w: Buschow K H J, Cahn R W, Flemings M C, Ilschner B, Kramer E J, Mahajan S (eds) Encyclopedia of Materials: Science and Technology, Volume 7, pp , Elsevier, Oxford "Electronic Structure of GaAsN under Pressure" I. Gorczyca, P. Bogusławski, A. Svane, and N. E. Christensen, in: "Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology", p. 91, Springer Series in Physics, ed. A. Erol (2008). 3. "Theoretical approach to polarization effects in semiconductors", in "Polarization Effects in Semiconductors", Springer Series in Physics, ed. Colin Wood and Debdeep Jena, p.2-25, Springer Referred articles: 1. "Interaction of high-energy phonons with conduction electrons in semiconductors", W. Zawadzki, Phys. Rev. Lett. 31, 1403 (1973). 2. "Scattering of conduction electrons on acoustic phonons in small-gap semiconductors", W. Zawadzki, Proc. Int. Conf. Small-Gap Semicond., Nice, France (1973). 3. "Elastic electron scattering in symmetry-induced zero-gap semiconductors", W. Szymanska, W. Zawadzki, phys. stat. solidi (b) 70, 53 (1974). 4. "Nonpolar scattering of electrons by optical phonons in small-gap semiconductors", phys. stat. solidi (b) 70, 53 (1975). 5. "Oddzialywanie fononow akustycznych ze swobodnymi elektronami w polprzewodnikach z waska przerwa energetyczna", P. Boguslawski i W. Zawadzki, Materialy Szkoly 'Jaszowiec 74', Prace IF PAN vol. 65, 216 (1975). 6. "Niepolarne rozpraszanie elektronow przez fonony optyczne w polprzewodnikach z waska przerwa wzbroniona", Materialy Szkoly 'Jaszowiec 1975', Prace IF PAN vol. 69, 294 (1976). 7. "Ekranowanie potencjalu deformacji przez swobodne nosniki", J. Mycielski, Materialy Szkoly 'Jaszowiec 76', Prace IF PAN vol. 74, 16 (1977). 8. "Is the deformation potential in semiconductors screened by free carriers?", J. Mycielski,

2 J. Phys. C 10, 2413 (1977). 9. "Screening of the deformation potential by free electrons in the multivalley conduction band", J. Phys. C 10, L417 (1977). 10. "Ekranowanie potencjalu deformacji przez swobodne nosniki w wielodolinowym pasmie przewodnictwa", Materialy Szkoly 'Jaszowiec 1977', Prace IF PAN vol. 75, 33 (1978). 11. "Electron spin relaxation in InSb at high magnetic fields", P. Bogusławski and W. Zawadzki, Inst. Phys. Conf. Ser. 43, 1027 (1979). 12. "Ekranowanie potencjalow krotkozasiegowych przez swobodne nosniki", P. Bogusławski i J. Mycielski, Materialy Szkoly 'Jaszowiec 79', Prace IF PAN vol. 82, 250 (1980). 13. "Electron-electron spin-flip scattering and spin relaxation in III-V and II-VI semiconductors", Sol. St. Commun. 33, 389 (1980). 14. "Free-electron screening of short-range scattering potentials in semiconductors", J. Mycielski, J. Phys. C 13, 1019 (1980). 15. "Electron spin relaxation in InSb at high magnetic fields", W. Zawadzki, J. Phys. C 13, 3933 (1980). 16. "The collision narrowing of the ESR line in InSb", J. Phys. C 13, 6709 (1980). 17. "Collision narrowing of the ESR line in InSb", Materialy Szkoly 'Jaszowiec 80', Proc. Conf. Phys. vol. 2, p. 160 (IF PAN, Warszawa 1980). 18. "The theory of the electron spin-lattice relaxation in zincblende semiconductors", phys. stat. solidi (b) 104, 89 (1981). 19. "Electronic structure of the self-interstitial in Si", G. Papp, and A. Baldereschi, Helv. Phys. Acta 56, 895 (1983). 20. G. Papp, and A. Baldereschi, "Tetrahedral-site versus hexagonal site self-interstitial in Silicon", Sol. St. Commun. 52, 155 (1984). 21. "Bond lengths and average lattice constant of GaInAs - a microscopic model",

3 P. Boguslawski i A. Baldereschi, Proc. 17th Int. Conf. Phys. Semicond., ed. W.A. Harrison (Springer-Verlag, New-York 1985), p "Electronic and crystal structure of semiconductors in pseudopotential theory", Acta Phys. Polonica A 69, 919 (1986). 23. "Ionicity-dependent structural properties of zinc-blende semiconductors", Sol. State Commun. 57, 623 (1986). 24. G. Papp, i A. Baldereschi, "Electronic energy of hexagonal site self-interstitial impurity in Si", Acta Univ. Szeged, Acta Phys. & Chem. 32, 9 (1986). 25. "Valence band offsets in heterojunctions: transitivity, commutativity, and a role of interface strains", Acta Phys. Polonica A 71, 195 (1987). 26. "Valence band offsets in heterojunctions: transitivity, commutativity, and a role of interface strains", Proc. 18th Int. Conf. Phys. Semicond. ed. O. Engstrom (World Scientific, 1987), p "Energy band structure of of (GaAs) 1 (InAs) 1 (001) superlattice and Ga 4-n In n As 4 (n=1,3) crystals", Proc. 14th Int. Symp. GaAs and Related Compounds", Inst. Phys. Conf. Ser. 91, 545 (1988). 28. "Excess elastic energy and the instability of (GaAs) 1 (InAs) 1, Ga 3 InAs 4, GaIn 3 As 4, and Ga 1-x In x As alloys", Sol. St. Commun. 66, 679 (1988). 29. "Crystallographic and electronic properties of of (GaAs) 1 (InAs) 1 (001) superlattice", 'Excitons in Confined Systems', ed. R. del Sole and A. D'Andrea (Springer-Verlag, Berlin 1988), p "Hexagonal site interstitial related states in Silicon", G. Papp, and A. Baldereschi, New Developments in Semicond. Physics, 'Lecture Notes in Physics', ed. G. Ferenczi and F. Beleznay (Springer-Verlag, Berlin 1988), p "Microscopic crystallographic properties of semiconductor alloys", Acta Phys. Polonica A 73, 827 (1988). 32. "Enhancement of Optical-Gap Bowing Induced by Long-range Order in III-V Alloys", Proc. 19th Int. Conf. Phys. Semicond., ed. W. Zawadzki, p. 849, (Institute of Physics PAN, Warsaw 1989).

4 33. "Instability of Lattice-mismatched Monolayer Superlattices - the Role of Elastic Energy", Proc. 19th Int. Conf. Phys. Semicond., ed. W. Zawadzki, p. 853, (Institute of Physics PAN, Warsaw 1989). 34. "Excess elastic energy and the instability of bulk and epitaxial lattice-mismatched monolayer (001) superlattices", Phys. Rev. B 39, 8055 (1989). 35. "Optical-gap reduction in the ordered phases of GaInAs solid solution", Sol. St. Commun. 70, 1085 (1989). 36. "Ordered phases of lattice-mismatched III-V alloys", Acta Phys. Polonica, A77, 205 (1990). 37. "Surface stability of ordered lattice-mismatched III-V alloys", Phys. Rev. B 42, 3737 (1990). 38. "Surface stability of ordered GaInP and GaAsSb alloys", Acta Phys. Polonica 79, 125 (1991). 39. "Thermodynamic stability of (001) surfaces of ordered GaInP and GaAsSb alloys", Proc. 20th ICPS, Thessaloniki 1990, ed. E.M. Anastassakis and J.D. Joannopoulos, World Scientific, p "Themodynamic stability of two rombohedral phases of SiGe alloy", Acta Phys. Polonica A80, 299 (1991). 41. "Influence of chemistry on the energy band structure: AlAs vs GaAs", P. Boguslawski and I. Gorczyca, Acta Phys. Polonica A80, 433 (1991). 42. "Stability of epitaxial GaInP ordered alloys:effects of dimensionality", Semicond. Sci. Technol. 6, 953 (1991). 43. "Surface energetics and epitaxial growth of Si/Ge systems", Proc. 21th Intern. Confer. Phys. Semicond. Beijing 1992, ed. P. Jiang i H. Zheng, p. 397 (World Scientific 1993). 44. "Global and local stability of lattice-mismatched semiconductor interfaces", P. Boguslawski and J.K. Furdyna, Semicond. Sci. Technol. 8, 1507 (1993). 45. "Reconstructions of Si- and C- terminated surfaces of 2H-SiC: ab initio molecular dynamics study", Y.G. Hwang, B. Chen, J. Bernholc,

5 MRS Symp. Proc. vol. 327, 293 (1994). 46. "Structure of Si(001) with monoatomic steps", Q.-M. Zhang, Z. Zhang, J. Bernholc, Proc. MRS Meeting, Boston "Structure of monoatomic steps on Si(001) surface", Q.M. Zhang, Z. Zhang, J. Bernholc, Phys. Rev. Lett. 72, 3694 (1994). 48. "Native defects and doping in hexagonal GaN and AlN", E. Briggs, A. White, M. Wensell, and J. Bernholc, Mat. Res. Soc. Symp. Proc. vol. 339, 693 (1994). 49. "Atomic-orbital interpretation of electronic structure of III-V semiconductors: GaAs vs AlAs", P. Boguslawski and I. Gorczyca, Semicond. Sci. Technol. 9, 2169 (1994). 50. "Pi-bonded reconstructions at Si- and C-terminated surfaces of 2H-SiC: ab-initio molecular dynamics study", Y-G. Hwang, B. Chen, J. Bernholc, J. Korean Phys. Soc. (Symp. Proc.) 27, S190 (1994). 51. "Theory of native defects and of carbon doping in GaN", E. Briggs, and J. Bernholc, Proc. 22 Int. Conf. Phys. Semicond. Vancouver 1994, p. 2331, ed. D.J. Lockwood (World Scientific 1995). 52. "Ab initio studies of Si(001) steps of monoatomic hight: structure and diffusion barriers", C. Roland, M. Wensell, and J. Bernholc, Proc. 22 Int. Conf. Phys. Semicond. Vancouver 1994, p. 493, ed. D.J. Lockwood (World Scientific 1995). 53. "Ab initio studies of single-height Si(001) steps", Q.-M. Zhang, Z. Zhang, C. Roland, Materials Sci. Engin. B 30, 167 (1995). 54. "Theory of native defects in GaN", E. Briggs, and J. Bernholc, Phys. Rev. B, Rapid Commun. 51, (1995). 55. "Ab Initio Studies of the Diffusion Barriers at Single-Height Si(100) Steps", Q.-M. Zhang, C. Roland, and J. Bernholc, Phys. Rev. Lett. 75, 101 (1995). 56. "Simulations of Si(100) growth: step flow and low temperature growth", C. Roland, Q.M. Zhang. G.H. Gilmer, and J. Bernholc, Mater. Res. Soc. Symp. Proc. 339, 511 (1996), Ed. A. Zangwill, D. Jesson, D. Chambliss, and R. Clarke. 57. "Towards the identification of the dominant donor in GaN", P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, P. Boguslawski, J. Bernholc, J. C. Chervin, A. Polian, and T. D. Moustakas, Phys. Rev. Lett. 75, 296 (1995).

6 58. "Free Electrons and Resonant Donor State in Gallium Nitride", P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, J. Bernholc and T.D. Moustakas, Defects in Semiconductors: ICDS-18, Eds. M. Suezawa and H. Katayama-Yoshida, Materials Science Forum Vols , p. 23 (1995). 59. "Ab Initio Simulations of Materials," J. Bernholc, C. Brabec, E. L. Briggs, A. Maiti, C. Roland, D. J. Sullivan, M. Wensell, Q.-M. Zhang and Z. Zhang, Proc. Symp. Science and Technology of Atomically Engineered Materials, ed. P. Jena, S.N. Khanna, and B. K. Rao, p. 193 (1996). 60. "Theory of defects, doping, surfaces and interfaces in wide gap nitrides", J. Bernholc, E.L. Briggs, M. Buongiorno Nardelli, B. Chen, K. Rapcewicz, Z. Zhang, Mat. Res. Soc. Symp. Proc. vol. 423, p. 465 (1996), ed. D.K Gaskill, C.D. Brandt, and R.J. Nemanich. 61. "Amphoteric properties of substitutional carbon impurity in GaN and AlN", Appl. Phys. Lett. 69, 233 (1996). 62. "Doping properites of C, Si, and Ge impurities in GaN and AlN", Acta Phys. Polonica 90, 735 (1996). 63. "Theory of group-iv impurities in wide gap nitrides", Proc. 23 ICPS Berlin 1996, p. 2889, ed. M. Scheffler and R. Zimmermann, World Scientific "Doping properities of C, Si, and Ge impurities in GaN and AlN", Phys. Rev. B (1997). 65. "Ab initio simulations of the Si(001) surface: steps and melting", C. Roland, G.M. Wensell, Q.M. Zhang, and J. Bernholc, In: Dynamics of Crystal Surfaces and Interfaces, ed. M. Thorpe and T. Pence (Plenum 1997). 66. "Doping and segregation effects in AlGaN systems" IEEE Semiconducting and Insulating Materials Conference, Edts. Z. Liliental-Weber and C. Miner, p "Segregation effects at vacancies in AlGaN and SiGe alloys", Phys. Rev. B 59, 1567 (1999). 68. "Surface segregation at AlN/GaN, GaN/InN, and AlN/InN {0001} surfaces", K. Rapcewicz, and J. Bernholc, Proc. 28 Intern. School on Physics of Semiconducting Compounds Jaszowiec 1999, p. 20.

7 69. "Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems", Krzysztof Rapcewicz, and J. Bernholc, Phys. Rev. B 61, (2000). 70. "Si(001) and SiGe(001) surfaces as a multiscale problem", Multiscale Computational Methods in Chemistry and Physics, A. Brandt, J. Bernholc, and K. Binder Eds., NATO Science Series vol. 177, p. 155, IOS Press, Amsterdam "GaAs:N vs. GaAs:B alloys: symmetry-induced effects", N. Szwacki Gonzalez and P. Bogusławski, Phys. Rev. B 64, (2001) (Rapid Commun). 72. "Surface Segregation of Ge at SiGe(001) by Concerted Exchange Pathways", Phys. Rev. Lett. 88, (2002). 73. "Electronic structure and optical properties of GaAsN and GaBAs alloys", N. Gonzalez Szwacki, P. Bogusławski, I. Gorczyca, N.E. Christensen, and A. Svane, Acta Phys. Polonica A 102, 633 (2002). 74. "Theoretical studies of semiconductors, with and without defects, under pressure", N.E. Christensen, A. Svane, I. Gorczyca, N. Gonzalez Szwacki, and phys. stat. solidi (b) 235, 374 (2003). 75. "Mn Interstitial Diffusion in (Ga,Mn)As", K.W. Edmonds, B.L. Gallagher, R.P. Campion, K.Y. Wang, N.R.S. Farley, C.T. Foxon, M. Sawicki, T. Dietl, M.B. Nardelli, and J. Bernholc, Phys. Rev. Lett. 92, (2004). 76. "Theory of Electronic Structure and Magnetic Interactions in (GaMn)N and (Ga,Mn)As", P. Bogusławski and J. Bernholc, Proc. 21 Int. Conf. Phys. Semicond., Flagstaff, AZ, Word Scientific "Influence of the Mn Interstitial on the Magnetic and Transport Properties of (Ga,Mn)As", K.Y. Wang, K.W. Edmonds, R.P. Campion, B.L. Gallagher, N.R.S. Farley, C.T. Foxon, M. Sawicki, P Boguslawski, and T Dietl, J. Appl. Phys. 95, 8979 (2004). 78. "Structural Properties of of MnTe, ZnTe, and ZnMnTe" N. Gonzalez Szwacki, E. Przezdziecka, E. Dynowska, J. Kossut, Acta Phys. Polonica 106, 233 (2004). 79. "Elastic Properties of zinc-blende MnTe", P. Demja, Y. Roussigne, A. Stashkevich, W. Szuszkiewicz, N. Gonzalez Szwacki, E. Dynowska, E. Janik, B.J. Kowalski, G. Karczewski, P. Bogusławski, M. Jouanne, and J.F. Morhange, Acta Phys. Polonica 106, 239 (2004). 80. "Fermi-level effects on the electronic structure and magnetic couplings in "Ga,Mn)N" P. Bogusławski and J. Bernholc, Phys. Rev. B 72, (2005).

8 81. "Properties of wurtzite w-mnn and of w-mnn inclusions in (Ga,Mn)N", P. Bogusławski and J. Bernholc Appl. Phys. Lett. 88, (2006). 82. "Interfacial segregation and electrodiffusion of dopants in AlN/GaN Superlattices", N. Gonzalez Szwacki, and J. Bernholc, Phys. Rev. Lett. 96, (2006). 83. Magnetism of CaAs, CaP, and CaN half-metals" O. Volnianska, P. Jakubas, and P. Bogusławski, J. Alloys Compounds 423, 191 (2006). 84. "Towards efficient p-type doping of ZnO with group-v atoms: N versus As and Sb" E. Kaminska, E. Przedziecka, D. Dobrowolski, E. Dynowska, R. Jakiela, I. Pasternak, J. Kossut, P. Bogusławski, A. Piotrowska, E. Lusakowska Proc. 29th Int. Conf. Phys. Semicond. Viena "Properties of p-type ZnO Grown by Oxidation of Zn-group-V Compounds", E. Kaminska, E. Przezdziecka, A. Piotrowska, J. Kossut, I. Pasternak, R. Jakiela, and E. Dynowska, in "Zinc Oxide and Related Materials", edited by J. Christen, C. Jagadish, D.C. Look, T. Yao, F. Bertram, Mater. Res. Soc. Symp. Proc. 957, Warrendale, PA, 2007, 0957-K "Magnetic and structural properties of IIA-V nitrides" O. Volnianska and Phys. Rev. B 75, (2007). 87. "Application of ZnO to passivate the GaN-based device structures" E. Kamińska, A. Piotrowska, M.-A. di Forte Poisson, C. Brylinski, H. Lahreche, N. Kwietniewski, I. Pasternak, Z. Sidor, R. Kruszka, W. Rzodkiewicz Mater. Res. Soc. Symp. Proc. vol. 1035, p L Ferroelectricity in ternary (Cd,Zn)-VI crystals T. Wojciechowski, P. Jakubas, P. Bogusławski, G. Karczewski, J. of Korean Phys. Soc. 53, 23 (2008). 89. "Application of ZnO to passivate the GaN-based device structures" E. Kamińska, A. Piotrowska, M.-A. di Forte Poisson, C. Brylinski, H. Lahreche, N. Kwietniewski, I. Pasternak, Z. Sidor, R. Kruszka, W. Rzodkiewicz MRS Fall Meeting, Boston 2007, MRS Fall Meeting, Boston 2007, Mater. Res. Soc. Symp. Proc. vol. 1035, p L "Molecular magnetism of monoclinic SrN: a first-principles study" O. Volnianska, Phys. Rev. B 77, R (2008). 91. "Generation of vacancy-interstitial pairs as a possible origin of resistivity switching and ferroelectric properties in Cd1-xZnxTe" P. Jakubas and Phys. Rev. B 77, (2008)

9 92. "Influence of the electrical conductivity on magnetic properties of CdZnMnTe epitaxial layers" T. Wojciechowski, P. Jakubas, V. Kolkovsky, K. Świątek, W. Knoff, T. Story, P. Bogusławski, and G. Karczewski, Proc Int. Conf. Phys. Semicond. ICPS "Group IB acceptors in ZnO: experiment and theory" E. Kaminska, I. Pasternak, A. Jezierski, E. Dynowska, R. Jakiela, E. Przezdziecka, A. Piotrowska, J. Kossut, Proc Int. Conf. Phys. Semicond. ICPS "Group IB acceptors in ZnO: experiment and theory" E. Kaminska, I. Pasternak, A. Jezierski, E. Dynowska, R. Jakiela, E. Przezdziecka, A. Piotrowska, J. Kossut, Proc Int. Conf. Phys. Semicond. ICPS "Theory of doping properties of Ag acceptors in ZnO" O. Volnianska, J. Kaczkowski, P. Jakubas, A. Jezierski, and E. Kaminska, Phys. Rev. B 80, (2009). 96. "Magnetism of solids resulting from spin polarization of p orbitals" O. Volnianska and J. Phys. Cond. Mat. 22, (2010). 97. "Calculated electronic structure of PbMnTe ((0<x<0.11): The role of L and S valence band maxima" A. Lusakowski, and T. Radzynski, Phys. Rev. B 83, (2011). 98. "High spin states of cation vacancies in GaP, GaN, AlN, BN, ZnO and BeO: A first principles study" O. Volnianska and Phys. Rev. B 83, (2011). 99. "Theory of nitrogen doping of carbon nanoribbons: Edge effects" J. Jiang, J. Turnbull, W. Lu, and J. Bernholc, J. Chem. Phys. 136, (2012).